multiple patterning 예문

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1. Consequently, there are more sources of variations and possible yield loss in multiple patterning.
2. TSMC is deploying 7 nm in 2017 with multiple patterning; specifically, pitch-splitting, down to 40 nm pitch.
3. This 10 nm design rule is considered likely to be realized by multiple patterning, given the difficulty of implementing EUV lithography.
4. Hence, multiple patterning with immersion lithography has been deployed for volume manufacturing, while deployment of EUV is expected in 2018 2020.
5. The 5 nm node ( 22 nm pitch ) would likewise be expected to use multiple patterning already being developed for immersion lithography.